Samsung collaborates with ASML to develop next-generation EUV lithography masks.

BlockBeats News, September 9 - According to the Seoul Economic Daily, Samsung Electronics will jointly develop High-NA EUV lithography technology with ASML, the world's largest manufacturer of lithography equipment. Samsung is participating in an initiative aimed at driving an industry standard shift, transitioning from the 6-inch photomask used since the 1980s to a 12-inch version, and striving to be the first to establish a DRAM mass production system based on High-NA EUV equipment.

Samsung plans to apply High-NA EUV equipment to DRAM production starting in 2028, and subsequently expand this technology to the 1.4-nanometer advanced logic process to boost its foundry business. Enlarging the mask size is intended to compensate for the limitations of EUV technology. High-NA EUV has a numerical aperture 66% higher than traditional EUV, enabling the formation of finer circuit patterns. Replacing the current 6-inch mask with a 12-inch mask can improve fab production efficiency and reduce chip manufacturing costs.