Samsung's HBM4E Yield Rate Exceeds 70%, Next-Gen DRAM Process D1d Targeting Production Readiness in November

BlockBeats News, July 1st, following the world's first mass production of HBM4 (6th generation), Samsung Electronics has made progress in HBM4E (7th generation) and next-generation DRAM development. Song Jae-hyuk, CTO of Samsung Electronics' DS Division and Head of the Semiconductor Institute, stated during an internal briefing on June 30th that the reliability test yield of HBM4E has increased to over 70%. The industry generally considers a yield of over 80% to indicate the "mature yield" stage of the process. Considering that HBM4E is still in the reliability testing phase, a yield of over 70% is seen as an indicator that the development is entering a stable range.

In February of this year, Samsung Electronics was the first to mass-produce HBM4 and publicly released the detailed technical specifications of the HBM4E 12-layer product on May 29th, shipping samples to key customers. HBM4 will be used in NVIDIA's AI accelerator Vera Rubin, set to be launched in the second half of this year, while HBM4E is expected to be used in NVIDIA's next year's release of the next-generation AI accelerator Vera Rubin Ultra and other products.

Samsung's next-generation DRAM process development is also progressing smoothly. Song Jae-hyuk believes that the D1d process technology has a competitive advantage over competitors and is aiming to receive production readiness approval by November. D1d is the core DRAM process that Samsung plans to apply from the next-generation HBM5 (8th generation), and if the plan proceeds as scheduled, it will have a positive impact on the competitiveness of the next-generation DRAM and subsequent HBM5 products. (Fnnews)